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Orientation measurement of a
6" silicon ingot
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Measurement of a
6" silicon wafer |
Measurement of a
lithiumniobate raw crystal |
Measurement and adjustment of
2" sapphire ingots |
Universal Measuring Unit for the Orientation Determination of
Raw Crystals, Ingots and Wafers and for the Ingot Adjustment
By means of this measuring unit, the orientation of crystals can be rapidly determined with a precision of arc seconds. The orientation is expressed by two angles describing the inclination of either the surface or the direction of the ingot axis to the crystal lattice. The measuring device can be specified for arbitrary crystalline materials and orientations. Optionally, tools may be used which allow to build an ingot stack. Here, the single ingots are measured and adjusted one over the other and then glued together to a steel plate.
Specification:
- Materials: silicon, silicon carbide, sapphire and quartz*
- Measurement of raw crystals, ingots and wafers
- Measuring principle: Omega-Scan
- Automatic setting of the measuring device according to the crystal height or wafer thickness
- Complete system with measuring device, X-ray generator and control PC
*) other crystal types on request
Option: Sapphire ingot adjustment and wafer measurement:
- Orientation measurement and adjustment; stacking and gluing
- Ingot diameters 2” – 6” (50.8 –152.4 mm)**
- Up to 5 ingots with lengths 50 – 150 mm**
- Maximum length of the stack 300 mm**
- Measurable orientation: (0001) ± 2° **
- Adjustable orientation deviation 0...1° in arbitrary direction
- Measuring time (at 4 overlays): 12 seconds
- Reproducibility of the orientation deviation (at 4 overlays): 10 arc seconds
- Reproducibility of the flat orientation (at 4 overlays): 30 arc seconds
**) other dimensions and orientations on request
Option: Silicon ingot and wafer measurement:
- Ingot diameters 2” – 12” (50.8 – 304.8 mm)**
- Maximum ingot length 1500 mm**
- Measurable orientations (at fixed measuring arrangement): (100), (111), (110) ± 5° **
- Measuring time (at 1 rotation): 3 seconds
- Reproducibility of the orientation deviation (at 1 rotation): 10 arc seconds
- Reproducibility of the flat orientation (at 1 rotation): 1 arc minute
**) other dimensions and orientations on request |
